Silicon nitride substrate
Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, and other high-power optoelectronics and semiconductor devices.
The existing insulating layer mainly uses silicon nitride material. By making the insulating layer absorb this thermal expansion rate, welding cracks can be solved and reduced, and heat dissipation can be improved.
Items | Specification | Unit |
Size | 114×114×0.32 | ㎜ |
Surface roughness | ≤0.8 | Ra |
Bulk density | 3.20 ± 0.05 | g/cm3 |
Modulus of elasticity | 300~320 | Gpa |
Poisson's ratio | ≤0.29 | - |
Vickers hardness | ≥14.2 | Gpa |
Coefficient of thermal expansion (25 ℃ ~ 500 ℃) | 3.0~3.2 | 10-6/℃ |
Fracture toughness | 6.0~7.0 | MPa |
Bending strength (three point bending) | 700~800 | Mpa |
Thermal conductivity (25 ℃) | ≥85 | W/(m•k) |