Oxide film wafer
Fuleda Technology supplies 2"~12" high-quality thermal oxide silicon wafers. The high-quality, defect-free product-grade silicon wafers are used as the substrate to grow a highly uniform thermal oxide layer to meet the performance beyond customer expectations. After the conventional thermal oxidation process, the silicon wafer generally has an oxide layer on both sides; if only a single-sided oxide layer is required, the oxide layer on one side can be ground and only leave the single-sided oxide layer to supply.
Oxidation Technique | Wet oxidation or Dry oxidation |
Size | 1″ / 2″ / 3″ / 4″ / 6″ / 8″ / 12″ inch |
Diameter | 4 5 6 inch/100mm 125mm 150mm |
Oxide Thickness | 100 Å ~ 15µm/10nm~15µm |
Tolerance | +/- 5% |
Surface | Single Side Oxidation(SSO) / Double Sides Oxidation(DSO) |
Furnace | Horizontal tube furnace |
Gas | Hydrogen and Oxygen gas |
Temperature | 900℃ ~ 1200 ℃ |