Oxide film wafer


Fuleda Technology supplies 2"~12" high-quality thermal oxide silicon wafers. The high-quality, defect-free product-grade silicon wafers are used as the substrate to grow a highly uniform thermal oxide layer to meet the performance beyond customer expectations. After the conventional thermal oxidation process, the silicon wafer generally has an oxide layer on both sides; if only a single-sided oxide layer is required, the oxide layer on one side can be ground and only leave the single-sided oxide layer to supply.


 Oxidation Technique Wet oxidation or Dry oxidation
 Size 1″ / 2″ /  3″ /  4″ /  6″ /  8″ /  12″ inch
 Diameter 4 5 6 inch/100mm 125mm 150mm
 Oxide Thickness 100 Å ~ 15µm/10nm~15µm
 Tolerance +/- 5%
 Surface Single Side Oxidation(SSO) / Double Sides Oxidation(DSO)
 Furnace Horizontal tube furnace
 Gas Hydrogen and Oxygen gas
 Temperature 900℃ ~ 1200 ℃
















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