The SOI wafer is a sandwich structure with a total of three layers; including the top layer (device layer), the middle buried oxide layer (insulating SiO2 layer), and the bottom substrate (Handle silicon). SOI wafers are produced using the SIMOX method and wafer bonding technology, which can achieve thinner and more precise device layers, uniform thickness, and low defect density. SOI wafers provide good solutions for high-speed and low-power devices and are widely regarded as new solutions for high-voltage and RF devices.

Fuleda Technology can provide SOI wafers with diameters of 2″, 3″, 4″, 5″, 6″ and 8″, with a wide range of resistivity options ranging from 0.001 to 100,000 ohm-cm, from 100nm (1000Å)~ 300um wide range of device layer thickness products, suitable for a wide range of applications in the manufacture of MEMS, power devices, pressure sensors, and CMOS integrated circuits.