Sapphire Substrate


FULEDA Technology can provide standard, non-standard, and special custom specifications of sapphire substrate substrates of 2 to 8 inches, which can be used for epitaxial growth of LED substrates, semiconductor film materials MOCVD, gallium nitride, etc.



 ITEM4 inch Sapphire
 Material >99.99%，High Purity， Mono-crystalline Al2O3 (KY)
 Diameter 100 ± 0.3 mm
 Thickness 650 ± 25um
 Orientation C Plane [0001] to M (1-100) 0.2°±0.1°
 Primary flat A-plane (11-20) ± 0.2°
 Primary Flat Length 30.0±1.0mm
 Front Side Epi-ready, Ra < 0.3nm
 Back Side Ra<1.2um
 TTV ≤ 10 um
 BOW ≤ 15 um
 WARP ≤ 15 um