Indium Phosphide Wafer
Indium phosphide (InP) is one of the important III-V compound semiconductor materials and is a new generation of electronic functional materials after Si and GaAs
As a substrate material, InP mainly has the following applications: optoelectronic devices, including light sources (LED, LD) and detectors (PD, APD avalanche photodetectors), etc., and are mainly used in optical fiber communication systems.
The optoelectronic integrated circuit (OEIC), which integrates lasers, photodetectors, and amplifiers, is an indispensable component of a new generation of 40Gb/s communication system, which can effectively improve device reliability and reduce device size.
| Type | Semi-insulated | N-Type | P-Type | No-Dope |
| Dopant | Fe | S / Sn | Zn | Undoped |
| Method | VGF | |||
| Diameter | 2", 3", 4", 6" inch | |||
| Orientation | (100)±0.5° | |||
| Thinkness | 350-675um ±25um | |||
| Flat | US / EJ | |||
| Carrier concentration | N/A | (0.8-8)E18 | (0.8-8)E18 | (1-10)E15 |
| Resisivity(ohm-cm) | >0.5*10^7 | N/A | N/A | N/A |
| Electron mobility(cm2/V.S.) | >1000 | 1000-2500 | 50-100 | 3000-5000 |
| Dislocationdensity(/cm2) | <5000 | <5000 | <500 | <500 |
| TTV | ≤ 10 μm | |||
| Warp | ≤ 15 μm | |||
| Surface | P/P, P/E, E/E | |||
