Gallium Nitride Wafer
Gallium nitride (GaN) is a third-generation semiconductor material with a wide bandgap. It has the outstanding characteristics of a large bandgap, high thermal conductivity, a high saturation migration rate of electrons, and a high breakdown electric field. GaN devices are widely used in high-frequency, high-speed, and high-power demand fields such as LED energy-saving lighting, laser projection displays, new energy vehicles, smart grids, and 5G communications.
FuledaTechnology can provide 2 to 4-inch gallium nitride (GaN) monocrystalline substrates or epitaxial wafers, as well as sapphire/silicon-based 2 to 8-inch GaN epitaxial wafers.
| Item | GaN-FS-C-U-C50 | GaN-FS-C-N-C50 | GaN-FS-C-SI-C50 |
| Diameter | 50.8 ± 1 mm | ||
| Thickness | 350 ± 25 μm | ||
| Orientation | C plane (0001) off angle toward M-axis 0.35 ± 0.15° | ||
| Prime Flat | (1-100) 0 ± 0.5°, 16 ± 1 mm | ||
| Second Flat | (11-20) 0 ± 3°, 8 ± 1 mm | ||
| Type | N-type | N-type | Semi-Insulating |
| Resisivity | ＜ 0.1 Ω·cm | ＜ 0.05 Ω·cm | ＞ 106 Ω·cm |
| TTV | ≤ 15 μm | ||
| BOW | ≤ 20 μm | ||
| Ga Face Surface Roughness | < 0.2 nm (polished) | ||
| N Face Surface Roughness | 0.5～1.5 μm | ||
| Ga Surface Roughness | or < 0.3 nm (polished and surface treatment for epitaxy) | ||
N Surface Roughness | option: 1~3 nm (fine ground); < 0.2 nm (polished) | ||
| Dislocation Density | From 1 x 105 to 3 x 106 cm-2 (calculated by CL) | ||
Defect Density | ＜ 2 cm-2 | ||
| Usable Area | ＞ 90% (edge and macro defects exclusion) | ||
