Silicon Carbide Wafer


Silicon carbide substrates are mainly used in IGBT, 5G, high-power devices, optoelectronics, electric vehicles, and other fields. Silicon carbide may replace silicon as a chip due to its excellent performance.


Fuleda Technology can provide 2~6 inch Production grade, Dummy grade silicon carbide substrates, and can also provide silicon carbide epitaxy (EPI) Processing service.



 Grade ProductionDummyTest
 Size/Diameter6 inch / 150mm±0.2
 Type/Thickness4H-N Type / 350um±25 / 500um±25
 OrientationOff axis : 4.0° toward <11-20>±0.5° for 4H-N
 Micropipe Density

≤1 /cm2 

≤10 /cm2 

N/A

 Resisivity

4H-N: 0.015~0.025 Ω·cm


(Area 75%) 0.015~0.028 Ω·cm


N/A

 Primary Flat Orientation {11-20}±5.0°
 Primary Flat Length 47.5 mm±2.0 mm
Wafer EdgeChamfer
 TTV/BOW/WARP≤10μm /≤40μm /≤60μm
Roughness
CMP Si: Ra＜0.5 nm
 Surface Finish
C-face: MP, Si-face: CMP 
Polytype Area

N/A

 ≤10 of Whole AreaN/A
 Edge ChipsN/A
≤2,the length and width of each ＜1mm 

Qty.2 ＜1.0 mm width and depth 

Cracks

N/A

N/A

N/A